Semiconductor devices

ABSTRACT

A semiconductor device may include a data storage region, a parity storage region and an error correction circuit. The data storage region may be configured to store first data and second data. The parity storage region may be configured to store a parity. The error correction circuit may be configured to correct an error of the first data or an error of the second data and the parity, based on a transmission selection signal.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority under 35 U.S.C 119(a) to KoreanPatent Application No. 10-2016-0061101, filed on May 18, 2016, which isincorporated herein by reference in its entirety.

BACKGROUND 1. Technical Field

Embodiments of the present disclosure may generally relate tosemiconductor devices, and more particularly, to a semiconductor deviceconfigured to selectively correct data.

2. Related Art

Recently, a DDR2 scheme or a DDR3 scheme receiving and outputting fourbit data or eight bit data during each clock cycle time has been used toimprove an operation speed of semiconductor devices. If a datatransmission speeds of the semiconductor devices increase, theprobability of errors occurring may increase while the semiconductordevices are operating. Accordingly, novel design schemes have beenproposed to improve the reliability of the data transmissions.

Whenever data is transmitted in semiconductor devices, error codes whichare capable of detecting an occurrence of the errors may be generatedand transmitted with the data to improve the reliability of the datatransmission. The error codes may include an error detection code (EDC)which is capable of detecting errors and an error correction code (ECC)which is capable of correcting the errors by itself.

SUMMARY

According to an embodiment, a semiconductor device may be provided. Thesemiconductor device may include a data storage region, a parity storageregion and an error correction circuit. The data storage region may beconfigured to store first data and second data. The parity storageregion may be configured to store a parity. The error correction circuitmay be configured to correct an error of the first data or an error ofthe second data and the parity, based on a transmission selectionsignal.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a representation of an example ofa configuration of a semiconductor device according to an embodiment.

FIG. 2 is a block diagram illustrating a representation of an example ofa configuration of an error correction circuit included in thesemiconductor device of FIG. 1.

FIG. 3 is a circuit diagram illustrating a representation of an exampleof a transmission control circuit included in the error correctioncircuit of FIG. 2.

FIG. 4 is a block diagram illustrating a representation of an example ofa configuration of a decode signal generation circuit included in theerror correction circuit of FIG. 2.

FIG. 5 is a circuit diagram illustrating a representation of an exampleof a selection syndrome signal generation circuit included in the decodesignal generation circuit of FIG. 4.

FIG. 6 is a block diagram illustrating a representation of an example ofa configuration of a pre-fail signal generation circuit included in thesemiconductor device of FIG. 1.

FIG. 7 is a block diagram illustrating a representation of an example ofa configuration of a fail signal generation circuit included in thesemiconductor device of FIG. 1.

FIG. 8 is a block diagram illustrating a representation of an example ofa configuration of a repair signal generation circuit included in thesemiconductor device of FIG. 1.

FIG. 9 is a block diagram illustrating a representation of an example ofa configuration of an electronic system employing the semiconductordevice illustrated in FIGS. 1 to 8.

DETAILED DESCRIPTION

Various embodiments of the present disclosure will be describedhereinafter with reference to the accompanying drawings. However, theembodiments described herein are for illustrative purposes only and arenot intended to limit the scope of the present disclosure.

Referring to FIG. 1, a semiconductor device according to an embodimentmay include a data storage region 1, a parity storage region 2, an errorcorrection circuit 3, a pre-fail signal generation circuit 4, a failsignal generation circuit 5 and a repair signal generation circuit 6.

The data storage region 1 may include a first data storage region 11 anda second data storage region 12. The first data storage region 11 maystore first data D1<1:64>. The second data storage region 12 may storesecond data D2<1:64>. The number of bits included in each of the firstand second data D1<1:64> and D2<1:64> may be set to be differentaccording to the embodiments.

The parity storage region 2 may include a parity P<1:8> which isgenerated to correct errors included in the first and second dataD1<1:64> and D2<1:64>. The parity storage region 2 may generate theparity P<1:8> from the first and second data D1<1:64> and D2<1:64>using, for example but not limited to, a hamming code realizationscheme. The number of bit or bits included in the parity P<1:8> may beset to be different according to the embodiments.

The error correction circuit 3 may correct the first and second dataD1<1:64> and D2<1:64> to generate first corrected data CD1<1:64> andsecond corrected data CD2<1:72> in response to a mode on signal ECC_ON,a transmission selection signal TSEL and the parity P<1:8>. Aconfiguration and an operation of the error correction circuit 3 will bedescribed below with reference to FIGS. 2 to 5.

The pre-fail signal generation circuit 4 may detect errors included inthe first and second data D1<1:64> and D2<1:64> and the parity P<1:8> togenerate a first pre-fail signal F_PRE1B and a second pre-fail signalF_PRE2B in response to the transmission selection signal TSEL, a firstfail signal FAIL1B and a second fail signal FAIL2B. The pre-fail signalgeneration circuit 4 may generate the first and second pre-fail signalsF_PRE1B and F_PRE2B which are enabled if errors are included in thefirst data D1<1:64>, the second data D2<1:64> or the parity P<1:8> whilethe transmission selection signal TSEL is enabled and the first andsecond fail signals FAIL1B and FAIL2B are disabled. That is, thepre-fail signal generation circuit 4 may generate the first and secondpre-fail signals F_PRE1B and F_PRE2B which are enabled if errorsincluded in the first and second data D1<1:64> and D2<1:64> and theparity P<1:8> are corrected by the error correction circuit 3 and noerrors are included in the first and second corrected data CD1<1:64> andCD2<1:72>. Logic levels of the first and second pre-fail signals F_PRE1Band F_PRE2B, which are enabled, may be set to be different according tothe embodiments. A configuration and an operation of the pre-fail signalgeneration circuit 4 will be described below with reference to FIG. 6.

The fail signal generation circuit 5 may detect errors included in thefirst and second corrected data CD1<1:64> and CD2<1:72> to generate thefirst and second fail signals FAIL1B and FAIL2B in response to thetransmission selection signal TSEL. The fail signal generation circuit 5may generate the first and second fail signals FAIL1B and FAIL2B whichare disabled if the transmission selection signal TSEL is enabled and noerrors are included in the first and second corrected data CD1<1:64> andCD2<1:72>. Logic levels of the first and second fail signals FAIL1B andFAIL2B, which are disabled, may be set to be different according to theembodiments. A configuration and an operation of the fail signalgeneration circuit 5 will be described below with reference to FIG. 7.

The repair signal generation circuit 6 may generate a first repairsignal REP1 and a second repair signal REP2 in response to the first andsecond pre-fail signals F_PRE1B and F_PRE2B, the first and second failsignals FAIL1B and FAIL2B, and a control signal CA. The repair signalgeneration circuit 6 may generate the first and second repair signalsREP1 and REP2, one of which is selectively enabled according to thecontrol signal CA while the first and second pre-fail signals F_PRE1Band F_PRE2B and the first and second fail signals FAIL1B and FAIL2B havepredetermined logic levels. The first data storage region 11 may berepaired if the first repair signal REP1 is enabled, and the second datastorage region 12 may be repaired if the second repair signal REP2 isenabled. The control signal CA may include at least one of a command, arow address signal and a column address signal. A configuration and anoperation of the repair signal generation circuit 6 will be describedbelow with reference to FIG. 8.

Referring to FIG. 2, the error correction circuit 3 may include a firstsyndrome signal generation circuit 31, a second syndrome signalgeneration circuit 32, a transmission control circuit 33, a signalsynthesis circuit 34, a decode signal generation circuit 35, a firsterror correction circuit 36 and a second error correction circuit 37.

The first syndrome signal generation circuit 31 may generate a firstsyndrome signal S1<1:8> from the first data D1<1:64> in response to themode on signal ECC_ON. The mode on signal ECC_ON may be enabled if adata correction operation executed according to an error correction codeECC starts. The first syndrome signal generation circuit 31 may generatethe first syndrome signal S1<1:8> including information on errors of thefirst data D1<1:64> using, for example but not limited to, a hammingcode realization scheme if the mode on signal ECC_ON is enabled. Thefirst syndrome signal generation circuit 31 may generate the firstsyndrome signal S1<1:8> which is set to have a logic “low” level if themode on signal ECC_ON is disabled. The first syndrome signal generationcircuit 31 may generate the first syndrome signal S1<1:8> from the firstdata D1<1:64> regardless of the parity P<1:8>. This is because the firstsyndrome signal S1<1:8> is generated from the first data D1<1:64> havinga predetermined pattern while all of bits included in the first andsecond data D1<1:64> and D2<1:64> have a logic “low” level and all ofbits included in the parity P<1:8> are set to have a logic “low” level.Further, the logic levels of the signals may be different from or theopposite of those described. For example, a signal described as having alogic “high” level may alternatively have a logic “low” level, and asignal described as having a logic “low” level may alternatively have alogic “high” level.

The second syndrome signal generation circuit 32 may generate a secondsyndrome signal S2<1:8> from the second data D2<1:64> and the parityP<1:8> in response to the mode on signal ECC_ON. The second syndromesignal generation circuit 32 may generate the second syndrome signalS2<1:8> including information on errors of the second data D2<1:64> andthe parity P<1:8> using, for example but not limited to, a hamming coderealization scheme if the mode on signal ECC_ON is enabled. The secondsyndrome signal generation circuit 32 may generate the second syndromesignal S2<1:8> which is set to have a logic “low” level if the mode onsignal ECC_ON is disabled. Further, the logic levels of the signals maybe different from or the opposite of those described. For example, asignal described as having a logic “high” level may alternatively have alogic “low” level, and a signal described as having a logic “low” levelmay alternatively have a logic “high” level.

The transmission control circuit 33 may output the first syndrome signalS1<1:8> as a first transmission syndrome signal TS1<1:8> or a secondtransmission syndrome signal TS2<1:8> in response to the transmissionselection signal TSEL. The transmission control circuit 33 may outputthe first syndrome signal S1<1:8> as the second transmission syndromesignal TS2<1:8> if the transmission selection signal TSEL is enabled.The transmission control circuit 33 may set the first transmissionsyndrome signal TS1<1:8> to a logic “low” level if the transmissionselection signal TSEL is enabled. The transmission control circuit 33may output the first syndrome signal S1<1:8> as the first transmissionsyndrome signal TS1<1:8> if the transmission selection signal TSEL isdisabled. The transmission control circuit 33 may set the secondtransmission syndrome signal TS2<1:8> to a logic “low” level if thetransmission selection signal TSEL is disabled. A configuration and anoperation of the transmission control circuit 33 will be described belowwith reference to FIG. 3. Further, the logic levels of the signals maybe different from or the opposite of those described. For example, asignal described as having a logic “high” level may alternatively have alogic “low” level, and a signal described as having a logic “low” levelmay alternatively have a logic “high” level.

The signal synthesis circuit 34 may synthesize the first transmissionsyndrome signal TS1<1:8> and the second syndrome signal S2<1:8> togenerate a synthesized syndrome signal CS<1:8>. The signal synthesiscircuit 34 may execute a logic operation, for example but not limitedto, an exclusive OR operation of the first transmission syndrome signalTS1<1:8> and the second syndrome signal S2<1:8> to generate thesynthesized syndrome signal CS<1:8>.

The decode signal generation circuit 35 may generate a first decodesignal DEC1<1:64> and a second decode signal DEC2<1:72> from the secondtransmission syndrome signal TS2<1:8> and the synthesized syndromesignal CS<1:8> in response to the transmission selection signal TSEL.The first decode signal DEC1<1:64> may include information on errorsincluded in the first data D1<1:64>. For example, if only a third bitDEC1<3> of the first decode signal DEC1<1:64> has a logic “high” level,a third bit D1<3> of the first data D1<1:64> corresponding to the thirdbit DEC1<3> of the first decode signal DEC1<1:64> may be regarded as anerroneous bit. A correspondence relationship between the bits of thefirst data D1<1:64> and the bits of the first decode signal DEC1<1:64>may be set to be different according to the embodiments. The seconddecode signal DEC2<1:72> may include information on errors included inthe second data D2<1:64> and the parity P<1:8>. For example, if only afifth bit DEC2<5> of the second decode signal DEC2<1:72> has a logic“high” level, a fifth bit D2<5> of the second data D2<1:64>corresponding to the fifth bit DEC2<5> of the second decode signalDEC2<1:72> may be regarded as an erroneous bit. In addition, if only asixty fifth bit DEC2<65> of the second decode signal DEC2<1:72> has alogic “high” level, a first bit P<1> of the parity P<1:8> correspondingto the sixty fifth bit DEC2<65> of the second decode signal DEC2<1:72>may be regarded as an erroneous bit. A correspondence relationshipbetween the bits of the second decode signal DEC2<1:72> and the bits ofthe second data D2<1:64> and the parity P<1:8> may be set to bedifferent according to the embodiments. The decode signal generationcircuit 35 may generate the first decode signal DEC1<1:64> from theinformation on errors of the first data D1<1:64> included in the secondtransmission syndrome signal TS2<1:8> if the transmission selectionsignal TSEL is enabled. The decode signal generation circuit 35 maygenerate the second decode signal DEC2<1:72> from the information onerrors of the second data D2<1:64> and the parity P<1:8> included in thesynthesized syndrome signal CS<1:8> if the transmission selection signalTSEL is enabled. The decode signal generation circuit 35 may generatethe first decode signal DEC1<1:64> from the information on errors of thefirst data D1<1:64> included in the synthesized syndrome signal CS<1:8>if the transmission selection signal TSEL is disabled. The decode signalgeneration circuit 35 may generate the second decode signal DEC2<1:72>from the information on errors of the second data D2<1:64> and theparity P<1:8> included in the synthesized syndrome signal CS<1:8> if thetransmission selection signal TSEL is disabled. A configuration and anoperation of the decode signal generation circuit 35 will be describedbelow with reference to FIGS. 4 and 5.

The first error correction circuit 36 may correct errors included in thefirst data D1<1:64> to generate the first corrected data CD1<1:64> inresponse to the first decode signal DEC1<1:64>. For example, the firsterror correction circuit 36 may invert a level of a third bit D1<3> ofthe first data D1<1:64> to output the first data D1<1:64> including theinverted third bit as the first corrected data CD1<1:64> if only a thirdbit DEC1<3> among the bits of the first decode signal DEC1<1:64> has alogic “high” level. Further, the logic levels of the signals may bedifferent from or the opposite of those described. For example, a signaldescribed as having a logic “high” level may alternatively have a logic“low” level, and a signal described as having a logic “low” level mayalternatively have a logic “high” level.

The second error correction circuit 37 may correct errors included inthe second data D2<1:64> and the parity P<1:8> to generate the secondcorrected data CD2<1:72> in response to the second decode signalDEC1<1:72>. For example, the second error correction circuit 37 mayinvert a level of a fifth bit D2<5> of the second data D2<1:64> tooutput the second data D2<1:64> including the inverted fifth bit and theparity P<1:8> as the second corrected data CD2<1:72> if only a fifth bitDEC2<5> among the bits of the second decode signal DEC2<1:72> has alogic “high” level. Further, the logic levels of the signals may bedifferent from or the opposite of those described. For example, a signaldescribed as having a logic “high” level may alternatively have a logic“low” level, and a signal described as having a logic “low” level mayalternatively have a logic “high” level.

Referring to FIG. 3, the transmission control circuit 33 may includeinverters IV31 and IV32, and logic gates, for example but not limitedto, a NOR gate NOR31 and a NAND gate NAND31. The transmission controlcircuit 33 may output the first syndrome signal S1<1:8> as the secondtransmission syndrome signal TS2<1:8> if the transmission selectionsignal TSEL is enabled to have a logic “high” level. The transmissioncontrol circuit 33 may set the first transmission syndrome signalTS1<1:8> to a logic “low” level if the transmission selection signalTSEL is enabled to have a logic “high” level. The transmission controlcircuit 33 may output the first syndrome signal S1<1:8> as the firsttransmission syndrome signal TS1<1:8> if the transmission selectionsignal TSEL is disabled to have a logic “low” level. The transmissioncontrol circuit 33 may set the second transmission syndrome signalTS2<1:8> to a logic “low” level if the transmission selection signalTSEL is disabled to have a logic “low” level. In such a case, the secondtransmission syndrome signal TS2<1:8> does not affect the synthesizedsyndrome signal CS<1:8> generated from the signal synthesis circuit 34because the second transmission syndrome signal TS2<1:8> is set to havea logic “low” level.

Referring to FIG. 4, the decode signal generation circuit 35 may includea selection syndrome signal generation circuit 351, a first decoder 352and a second decoder 353.

The selection syndrome signal generation circuit 351 may generate afirst selection syndrome signal S_SEL1<1:8> and a second selectionsyndrome signal S_SEL2<1:8> from the second transmission syndrome signalTS2<1:8> or the synthesized syndrome signal CS<1:8> in response to thetransmission selection signal TSEL. The selection syndrome signalgeneration circuit 351 may buffer the second transmission syndromesignal TS2<1:8> to generate the first selection syndrome signalS_SEL1<1:8> if the transmission selection signal TSEL has a logic “high”level. The selection syndrome signal generation circuit 351 may bufferthe synthesized syndrome signal CS<1:8> to generate the first selectionsyndrome signal S_SEL1<1:8> if the transmission selection signal TSELhas a logic “low” level. The selection syndrome signal generationcircuit 351 may buffer the synthesized syndrome signal CS<1:8> togenerate the second selection syndrome signal S_SEL2<1:8>.

The first decoder 352 may decode the first selection syndrome signalS_SEL1<1:8> to generate the first decode signal DEC1<1:64>. The firstdecode signal DEC1<1:64> may include information on errors included inthe first data D1<1:64>. For example, if only a third bit DEC1<3> of thefirst decode signal DEC1<1:64> has a logic “high” level, a third bitD1<3> of the first data D1<1:64> corresponding to the third bit DEC1<3>of the first decode signal DEC1<1:64> may be regarded as an erroneousbit. A correspondence relationship between the bits of the first dataD1<1:64> and the bits of the first decode signal DEC1<1:64> may be setto be different according to the embodiments.

The second decoder 353 may decode the second selection syndrome signalS_SEL2<1:8> to generate the second decode signal DEC2<1:72>. The seconddecode signal DEC2<1:72> may include information on errors included inthe second data D2<1:64> and the parity P<1:8>. For example, if only afifth bit DEC2<5> of the second decode signal DEC2<1:72> has a logic“high” level, a fifth bit D2<5> of the second data D2<1:64>corresponding to the fifth bit DEC2<5> of the second decode signalDEC2<1:72> may be regarded as an erroneous bit. In addition, if only asixty fifth bit DEC2<65> of the second decode signal DEC2<1:72> has alogic “high” level, a first bit P<1> of the parity P<1:8> correspondingto the sixty fifth bit DEC2<65> of the second decode signal DEC2<1:72>may be regarded as an erroneous bit. A correspondence relationshipbetween the bits of the second decode signal DEC2<1:72> and the bits ofthe second data D2<1:64> and the parity P<1:8> may be set to bedifferent according to the embodiments.

Referring to FIG. 5, the selection syndrome signal generation circuit351 may include a first selection syndrome signal generation circuit 355and a second selection syndrome signal generation circuit 356. The firstselection syndrome signal generation circuit 355 may buffer the secondtransmission syndrome signal TS2<1:8> to generate the first selectionsyndrome signal S_SEL1<1:8> if the transmission selection signal TSELhas a logic “high” level. The first selection syndrome signal generationcircuit 355 may buffer the synthesized syndrome signal CS<1:8> togenerate the first selection syndrome signal S_SEL1<1:8> if thetransmission selection signal TSEL has a logic “low” level. The secondselection syndrome signal generation circuit 356 may buffer thesynthesized syndrome signal CS<1:8> to generate the second selectionsyndrome signal S_SEL2<1:8>.

Referring to FIG. 6, the pre-fail signal generation circuit 4 mayinclude a first pre-comparison circuit 41, a second pre-comparisoncircuit 42, a first signal output circuit 43 and a second signal outputcircuit 44.

The first pre-comparison circuit 41 may generate a first comparisonsignal COM1B from the first data D1<1:64> in response to thetransmission selection signal TSEL. The first pre-comparison circuit 41may compare logic levels of the bits included in the first data D1<1:64>with each other to generate the first comparison signal COM1B while thetransmission selection signal TSEL is enabled to have a logic “high”level. If the first data D1<1:64> include at least one erroneous bit,the first pre-comparison circuit 41 may generate the first comparisonsignal COM1B which is enabled to have a logic “low” level because all ofthe bits included in the first data D1<1:64> do not have the same logiclevel. The first pre-comparison circuit 41 may include a compressiveparallel test circuit to write data having the same logic level into allof the bits included in the first data D1<1:64> and to execute acompressive parallel test for reading out the first data D1<1:64>.Further, the logic levels of the signals may be different from or theopposite of those described. For example, a signal described as having alogic “high” level may alternatively have a logic “low” level, and asignal described as having a logic “low” level may alternatively have alogic “high” level.

The second pre-comparison circuit 42 may generate a second comparisonsignal COM2B from the second data D2<1:64> and the parity P<1:8> inresponse to the transmission selection signal TSEL. The secondpre-comparison circuit 42 may compare logic levels of the bits includedin the second data D2<1:64> and the parity P<1:8> with each other togenerate the second comparison signal COM2B while the transmissionselection signal TSEL is enabled to have a logic “high” level. If thesecond data D2<1:64> or the parity P<1:8> include at least one erroneousbit, the second pre-comparison circuit 42 may generate the secondcomparison signal COM2B which is enabled to have a logic “low” levelbecause all of the bits included in the second data D2<1:64> and theparity P<1:8> do not have the same logic level. The secondpre-comparison circuit 42 may include a compressive parallel testcircuit to write data having the same logic level into all of the bitsincluded in the second data D2<1:64> and the parity P<1:8> and toexecute a compressive parallel test for reading out the second dataD2<1:64> and the parity P<1:8>. Further, the logic levels of the signalsmay be different from or the opposite of those described. For example, asignal described as having a logic “high” level may alternatively have alogic “low” level, and a signal described as having a logic “low” levelmay alternatively have a logic “high” level.

The first signal output circuit 43 may output the first pre-fail signalF_PRE1B in response to the first comparison signal COM1B and the firstfail signal FAIL1B. The first signal output circuit 43 may generate thefirst pre-fail signal F_PRE1B which is enabled if the first comparisonsignal COM1B is enabled and the first fail signal FAIL1B is disabled.The first signal output circuit 43 may generate the first pre-failsignal F_PRE1B which is enabled if the errors included in the first dataD1<1:64> are corrected so that no errors are included in the firstcorrected data CD1<1:64>.

The second signal output circuit 44 may output the second pre-failsignal F_PRE2B in response to the second comparison signal COM2B and thesecond fail signal FAIL2B. The second signal output circuit 44 maygenerate the second pre-fail signal F_PRE2B which is enabled if thesecond comparison signal COM2B is enabled and the second fail signalFAIL2B is disabled. The second signal output circuit 44 may generate thesecond pre-fail signal F_PRE2B which is enabled if the errors includedin the second data D2<1:64> and the parity P<1:8> are corrected so thatno errors are included in the second corrected data CD2<1:72>.

If the errors included in the first and second data D1<1:64> andD2<1:64> and the parity P<1:8> are corrected so that no errors areincluded in the first and second corrected data CD1<1:64> and CD2<1:72>,the pre-fail signal generation circuit 4 may generate the first andsecond pre-fail signals F_PRE1B and F_PRE2B which are enabled.

Referring to FIG. 7, the fail signal generation circuit 5 may include afirst comparison circuit 51 and a second comparison circuit 52. Thefirst comparison circuit 51 may generate the first fail signal FAIL1Bfrom the first corrected data CD1<1:64> in response to the transmissionselection signal TSEL. The first comparison circuit 51 may compare logiclevels of the bits included in the first corrected data CD1<1:64> witheach other to generate the first fail signal FAIL1B while thetransmission selection signal TSEL is enabled to have a logic “high”level. The first comparison circuit 51 may include, for example but notlimited to, a compressive parallel test circuit to write data having thesame logic level into all of the bits included in the first correcteddata CD1<1:64> and to execute a compressive parallel test for readingout the first corrected data CD1<1:64>. The second comparison circuit 52may generate the second fail signal FAIL2B from the second correcteddata CD2<1:72> in response to the transmission selection signal TSEL.The second comparison circuit 52 may compare logic levels of the bitsincluded in the second corrected data CD1<1:72> with each other togenerate the second fail signal FAIL2B while the transmission selectionsignal TSEL is enabled to have a logic “high” level. The secondcomparison circuit 52 may include a compressive parallel test circuit towrite data having the same logic level into all of the bits included inthe second corrected data CD2<1:72> and to execute a compressiveparallel test for reading out the second corrected data CD2<1:72>.Further, the logic levels of the signals may be different from or theopposite of those described. For example, a signal described as having alogic “high” level may alternatively have a logic “low” level, and asignal described as having a logic “low” level may alternatively have alogic “high” level.

Referring to FIG. 8, the repair signal generation circuit 6 may includea selection activation signal generation circuit 61 and a signal outputcircuit 62.

The selection activation signal generation circuit 61 may generate aselection activation signal SEL_EN which is enabled while the first andsecond pre-fail signals F_PRE1B and F_PRE2B and the first and secondfail signals FAIL1B and FAIL2B have a predetermined level combination.The predetermined level combination of the first and second pre-failsignals F_PRE1B and F_PRE2B and the first and second fail signals FAIL1Band FAIL2B for enabling the selection activation signal SEL_EN may beset to be different according to the embodiments.

The signal output circuit 62 may generate the first repair signal REP1and the second repair signal REP2, one of which is selectively enabledaccording to the control signal CA while the selection activation signalSEL_EN is enabled. A logic level of the control signal CA for enablingthe first repair signal REP1 or the second repair signal REP2 may be setto different according to the embodiments.

An operation of the semiconductor device having an aforementionedconfiguration will be described hereinafter in conjunction with anexample in which the transmission selection signal TSEL is disabled andan example in which the transmission selection signal TSEL is enabled.Further, the logic levels of the signals may be different from or theopposite of those described. For example, a signal described as having alogic “high” level may alternatively have a logic “low” level, and asignal described as having a logic “low” level may alternatively have alogic “high” level.

If the transmission selection signal TSEL is disabled to have a logic“low” level, the first syndrome signal S1<1:8> may be outputted as thefirst transmission syndrome signal TS1<1:8> and an exclusive ORoperation of the first transmission syndrome signal TS1<1:8> and thesecond syndrome signal S2<1:8> may be executed to generate thesynthesized syndrome signal CS<1:8>. In such a case, all of the bitsincluded in the first transmission syndrome signal TS1<1:8> or all ofthe bits included in the second syndrome signal S2<1:8> may be set tohave a logic “low” level. If all of the bits included in the firsttransmission syndrome signal TS1<1:8> are set to have a logic “low”level, the synthesized syndrome signal CS<1:8> may be generated bybuffering the second syndrome signal S2<1:8> including the informationon the errors included in the second data D2<1:64> and the parityP<1:8>. Thus, errors included in the second data D2<1:64> and the parityP<1:8> may be corrected by the second decode signal DEC2<1:72> which isgenerated by decoding the synthesized syndrome signal CS<1:8>, and thecorrected second data D2<1:64> and the corrected parity P<1:8> mayproduce the second corrected data CD2<1:72>. If all of the bits includedin the second syndrome signal S2<1:8> are set to have a logic “low”level, the synthesized syndrome signal CS<1:8> may be generated bybuffering the first transmission syndrome signal TS1<1:8> including theinformation on the errors included in the first data D1<1:64>.Accordingly, errors included in the first data D1<1:64> may be correctedby the first decode signal DEC1<1:64> which is generated by decoding thesynthesized syndrome signal CS<1:8>, and the corrected first dataD1<1:64> may produce the first corrected data CD1<1:64>.

If the transmission selection signal TSEL is enabled to have a logic“high”, the first syndrome signal S1<1:8> may be outputted as the secondtransmission syndrome signal TS2<1:8> and all of the bits included inthe first transmission syndrome signal TS1<1:8> may be set to have alogic “low” level. Thus, the second syndrome signal S2<1:8> may bebuffered to generate the synthesized syndrome signal CS<1:8>. Errorsincluded in the first data D1<1:64> may be corrected by the first decodesignal DEC2<1:64> which is generated by decoding the second transmissionsyndrome signal TS2<1:8>, and the corrected first data D1<1:64> mayproduce the first corrected data CD1<1:64>. Errors included in thesecond data D2<1:64> and the parity P<1:8> may be corrected by thesecond decode signal DEC2<1:72> which is generated by decoding thesynthesized syndrome signal CS<1:8>, and the corrected second dataD2<1:64> and the corrected parity P<1:8> may produce the secondcorrected data CD1<1:72>.

If one erroneous bit is included in each of the first data D1<1:64> andthe second data D2<1:64> and the first and second corrected dataCD1<1:64> and CD2<1:72> are generated, the first data storage region 11may be repaired or the second data storage region 12 and the paritystorage region 2 may be repaired according to a logic level of thecontrol signal CA.

As described above, a semiconductor device according to an embodimentmay selectively correct errors included in the first data D1<1:64> orthe second data D2<1:64> and the parity P<1:8>. In addition, thesemiconductor device selectively repair any one of the first datastorage region 11, the second data storage region 12 and the paritystorage region 2.

The semiconductor device described with reference to FIGS. 1 to 8 may beapplied to an electronic system that includes, for example but notlimited to, a memory system, a graphic system, a computing system, amobile system, or the like. For example, as illustrated in FIG. 9, anelectronic system 1000 according an embodiment may include a datastorage circuit 1001, a memory controller 1002, a buffer memory 1003,and an input/output (I/O) interface 1004.

The data storage circuit 1001 may store data which are outputted fromthe memory controller 1002 or may read and output the stored data to thememory controller 1002, according to a control signal generated from thememory controller 1002. The data storage circuit 1001 may include thesemiconductor device illustrated in FIG. 1. The data storage circuit1001 may include a nonvolatile memory that can retain their stored dataeven when its power supply is interrupted. The nonvolatile memory may bea flash memory such as a NOR-type flash memory or a NAND-type flashmemory, a phase change random access memory (PRAM), a resistive randomaccess memory (RRAM), a spin transfer torque random access memory(STTRAM), a magnetic random access memory (MRAM), or the like.

The memory controller 1002 may receive a command outputted from anexternal device (e.g., a host device) through the I/O interface 1004 andmay decode the command outputted from the host device to control anoperation for inputting data into the data storage circuit 1001 or thebuffer memory 1003 or for outputting the data stored in the data storagecircuit 1001 or the buffer memory 1003. Although FIG. 9 illustrates thememory controller 1002 with a single block, the memory controller 1002may include one controller for controlling the data storage circuit 1001comprised of a nonvolatile memory and another controller for controllingthe buffer memory 1003 comprised of a volatile memory.

The buffer memory 1003 may temporarily store the data which areprocessed by the memory controller 1002. That is, the buffer memory 1003may temporarily store the data which are outputted from or to beinputted to the data storage circuit 1001. The buffer memory 1003 maystore the data, which are outputted from the memory controller 1002,according to a control signal. The buffer memory 1003 may read andoutput the stored data to the memory controller 1002. The buffer memory1003 may include a volatile memory such as a dynamic random accessmemory (DRAM), a mobile DRAM, or a static random access memory (SRAM).

The I/O interface 1004 may physically and electrically connect thememory controller 1002 to the external device (i.e., the host). Thus,the memory controller 1002 may receive control signals and data suppliedfrom the external device (i.e., the host) through the I/O interface 1004and may output the data generated from the memory controller 1002 to theexternal device (i.e., the host) through the I/O interface 1004. Thatis, the electronic system 1000 may communicate with the host through theI/O interface 1004. The I/O interface 1004 may include any one ofvarious interface protocols such as a universal serial bus (USB), amulti-media card (MMC), a peripheral component interconnect-express(PCI-E), a serial attached SCSI (SAS), a serial AT attachment (SATA), aparallel AT attachment (PATA), a small computer system interface (SCSI),an enhanced small device interface (ESDI) and an integrated driveelectronics (IDE).

The electronic system 1000 may be used as an auxiliary storage device ofthe host or an external storage device. The electronic system 1000 mayinclude a solid state disk (SSD), a USB memory, a secure digital (SD)card, a mini secure digital (mSD) card, a micro secure digital (microSD) card, a secure digital high capacity (SDHC) card, a memory stickcard, a smart media (SM) card, a multi-media card (MMC), an embeddedmulti-media card (eMMC), a compact flash (CF) card, or the like.

According to the present disclosure, data stored in any one of aplurality of data storage regions may be selectively corrected toimprove an efficiency of correcting the data.

In addition, any one of the plurality of data storage regions may beselectively repaired to improve a repair efficiency of a semiconductordevice.

What is claimed is:
 1. A semiconductor device comprising: a data storageregion configured to store first data and second data; a parity storageregion configured to store a parity; and an error correction circuitconfigured to correct an error of the first data and an error of thesecond data and the parity together with each other or configured tocorrect the error of the first data and the error of the second data andthe parity separately, in response to a transmission selection signal.2. The semiconductor device of claim 1, wherein the error correctioncircuit includes: a first syndrome signal generation circuit configuredto generate a first syndrome signal from the first data; a secondsyndrome signal generation circuit configured to generate a secondsyndrome signal from the second data and the parity; a transmissioncontrol circuit configured to output the first syndrome signal as afirst transmission syndrome signal or a second transmission syndromesignal based on the transmission selection signal; a signal synthesiscircuit configured to generate a synthesized syndrome signal from thefirst transmission syndrome signal and the second syndrome signal; and adecode signal generation circuit configured to decode the secondtransmission syndrome signal and the synthesized syndrome signal togenerate a first decode signal and a second decode signal based on thetransmission selection signal.
 3. The semiconductor device of claim 2,wherein the first syndrome signal generation circuit is configured togenerate the first syndrome signal including information on the errorincluded in the first data using a hamming code realization scheme. 4.The semiconductor device of claim 2, wherein the second syndrome signalgeneration circuit is configured to generate the second syndrome signalincluding information on the error included in the second data and theparity using a hamming code realization scheme.
 5. The semiconductordevice of claim 2, wherein the transmission control circuit isconfigured to output the first syndrome signal as the secondtransmission syndrome signal based on the transmission selection signal.6. The semiconductor device of claim 2, wherein the transmission controlcircuit is configured to output the first syndrome signal as the firsttransmission syndrome signal based on the transmission selection signal.7. The semiconductor device of claim 2, wherein the decode signalgeneration circuit is configured to decode the second transmissionsyndrome signal to generate the first decode signal and configured todecode the synthesized syndrome signal to generate the second decodesignal, based on the transmission selection signal.
 8. The semiconductordevice of claim 2, wherein the decode signal generation circuit isconfigured to decode the synthesized syndrome signal to generate thefirst decode signal and the second decode signal, based on thetransmission selection signal.
 9. The semiconductor device of claim 2,further comprising a first error correction circuit configured tocorrect the error included in the first data to generate the firstcorrected data based on the first decode signal.
 10. The semiconductordevice of claim 9, further comprising a second error correction circuitconfigured to correct the error included in the second data and theparity to generate the second corrected data based on the second decodesignal.
 11. A semiconductor device comprising: an error correctioncircuit configured to correct an error of a first data and an error of asecond data and a parity together with each other to generate a firstcorrected data and a second corrected data or configured to separatelycorrect the error of the first data and the error of the second data andthe parity to generate the first corrected data and the second correcteddata, in response to a transmission selection signal; a fail signalgeneration circuit configured to generate a first fail signal and asecond fail signal from the first corrected data and the secondcorrected data; a pre-fail signal generation circuit configured togenerate a first pre-fail signal and a second pre-fail signal from thefirst and second data and the parity in response to the transmissionselection signal and the first and second fail signals; and a repairsignal generation circuit configured to generate a first repair signaland a second repair signal in response to the first and second pre-failsignals, the first and second fail signals, and a control signal. 12.The semiconductor device of claim 11, wherein the pre-fail signalgeneration circuit is configured to generate the first pre-fail signaland the second pre-fail signal which are enabled if the errors includedin the first and second data and the parity are corrected so that thefirst and second fail signals are disabled, while the transmissionselection signal is enabled.
 13. The semiconductor device of claim 11,wherein the fail signal generation circuit is configured to generate thefirst fail signal which is enabled if the first corrected data includesan error; and wherein the fail signal generation circuit is configuredto generate the second fail signal which is enabled if the secondcorrected data includes an error.
 14. The semiconductor device of claim11, wherein the repair signal generation circuit is configured togenerate the first repair signal and the second repair signal, one ofwhich is selectively enabled based on the control signal while the firstand second pre-fail signals are enabled and the first and second failsignals are disabled.
 15. The semiconductor device of claim 11, whereinthe control signal includes at least one of a command, a row address anda column address.
 16. The semiconductor device of claim 11, wherein theerror correction circuit includes: a first syndrome signal generationcircuit configured to generate a first syndrome signal from the firstdata; a second syndrome signal generation circuit configured to generatea second syndrome signal from the second data and the parity; atransmission control circuit configured to output the first syndromesignal as a first transmission syndrome signal or a second transmissionsyndrome signal based on the transmission selection signal; a signalsynthesis circuit configured to generate a synthesized syndrome signalfrom the first transmission syndrome signal and the second syndromesignal; and a decode signal generation circuit configured to decode thesecond transmission syndrome signal and the synthesized syndrome signalto generate a first decode signal and a second decode signal based onthe transmission selection signal.
 17. The semiconductor device of claim16, wherein the transmission control circuit is configured to output thefirst syndrome signal as the second transmission syndrome signal basedon the transmission selection signal; and wherein the transmissioncontrol circuit is configured to output the first syndrome signal as thefirst transmission syndrome signal based on the transmission selectionsignal.
 18. The semiconductor device of claim 16, wherein the decodesignal generation circuit is configured to decode the secondtransmission syndrome signal to generate the first decode signal andconfigured to decode the synthesized syndrome signal to generate thesecond decode signal, based on the transmission selection signal. 19.The semiconductor device of claim 16, wherein the decode signalgeneration circuit is configured to decode the synthesized syndromesignal to generate the first decode signal and the second decode signal,based on the transmission selection signal.
 20. The semiconductor deviceof claim 16, further comprising: a first error correction circuitconfigured to correct the error included in the first data to generatethe first corrected data based on the first decode signal; and a seconderror correction circuit configured to correct the error included in thesecond data and the parity to generate the second corrected data basedon the second decode signal.